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| Datasheet File OCR Text: |
| i nchange semiconductor isc product specif ication isc website isc & iscsemi is registered trademark 1 isc silicon pnp power transistor 2s b 9 9 6 description collector - emitter breakdown voltage - : v (br) ceo = - 8 0v(min) good linearity of h fe complement to type 2sd13 5 6 applications p ow e r amplifier applications. recommended for 2 0 ~25 w high - fidelity audio frequency amplifier output stage. a bsolute maximum ratings (t a = 25 symbol parameter value unit v cbo collector - b ase v oltage - 8 0 v v ceo collector - e mitter v oltage - 8 0 v v ebo emitter - b ase v oltage - 5 v i c collector c urrent - continuous - 4 a i b base c urrent - continuous - 0. 4 a p c collector p ower d issipat i on @ t c = 25 3 0 w t j junction t emperature 150 t stg storage t emperature - 5 5 ~150
i nchange semiconductor isc product specif ication isc website isc & iscsemi is registered trademark 2 isc silicon pnp power transistor 2sb9 9 6 electrical characteristics tj=25 v (br) ce o collector - e mitter breakdown v oltage i c = - 3 0 m a; i b = 0 - 8 0 v v c e ( sat ) collector - e mitter s aturation v oltage i c = - 3 a ; i b = - 0. 3 a - 1.7 v v be ( on ) base - e mitter o n v oltage i c = - 3 a; v ce = - 5 v - 1. 5 v i c b o collector c utoff c urrent v c b = - 8 0 v ; i e = 0 - 3 0 a i ebo emitter c utoff c urrent v eb = - 5 v; i c = 0 - 0.1 m a h fe - 1 dc c urrent g ain i c = - 0.5 a; v ce = - 5 v 40 2 4 0 h fe - 2 dc c urrent g ain i c = - 3 a; v ce = - 5 v 15 c ob output capacitance i e = 0 ; v c b = - 10 v ; f test = 1mhz 130 pf f t current - gain bandwidth product i c = - 0.5 a; v ce = - 5 v 9 mhz ? h fe - 1 classifications r o y 40 - 80 70 - 140 120 - 240 |
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